| 摘要 |
PURPOSE:To eliminate the need for a process, in which separate substrate is bonded, by forming a photodetecting section and a driving circuit on the surface and the back of the same substrate and connecting both by a wiring through a through-hole. CONSTITUTION:An amplifier and other driving circuits are shaped to an Si growth layer 13, and an n type region 18 is formed through the implantation of B<+> ions in order to shape a P-N junction for a photodetecting element. Al15 for a wiring is shaped so as to unit one part of the n type region 18 and the Si growth layer 13 side where the driving circuit is formed, and shaped through a method, such as ion beam evaporation, electron beam evaporation, etc. while masking sections except a required section. Al is evaporated from both upper and lower surfaces, and the wiring is connected by plating. A HgCdTe growth section 14 in the photodetecting element section and the Si growth layer 13 are displaced, and formed on both surfaces of a sapphire substrate 11. |
