| 摘要 |
PURPOSE:To improve the quality of an silicon nitride film by making nitrogen monoxide to coexist in a reaction cell and growing the silicon nitride film. CONSTITUTION:An silicon nitride film is grown while making nitrogen monoxide (NO) to coexist in a reaction cell together with the hydride of silicon and nitrogen or argon. Reaction processed at a time when nitrogen monoxide is added are not distinct, but reaction processes shown in formula I are considered. The frequent generation of any reaction is not definite, but NO is related to H extracted from SiH4, thus acquiring preferable results in both a film forming rate and film quality. |
