| 摘要 |
PURPOSE:To obtain the excellent insulating characteristics and a large coupling capacity by a method wherein, when the first and second non-single crystal semiconductor layers are laminated on the semiconductor substrate through an insulating film and an EPROM and so forth are made, the insulating film to be made to interpose is constituted of such a metal oxide as Ta2O5, O2 is made to release from the oxide by performing a heat treatment and an oxide film is made to grow on the interface between the first and second semiconductor layers. CONSTITUTION:An SiO2 film 12 is coated on a single crystal Si substrate 11 by performing a heat oxidation and a first non-single crystal Si layer 13 is deposited thereon while an impurity is made to contain in the layer 13 in case of need. Then, a Ta film is coated thereon, the Ta film is converted into a Ta2O5 film 15 by performing a heat oxidation and a second non-volatile crystal Si layer 17 is coated thereon. After that, a reactive ion etching is performed on the laminated material consisting of the layer 17, the film 15 and the layer 13, the laminated material is insularly formed, ions are implanted in the substrate 11 through the film 12 using the insular laminated material as a mask and source and drain regions 19 are formed. After that, a heat treatment is performed in an atmosphere of wet oxygen to make O2 in the film 15 release, and an SiO2 film 14 and an SiO2 film 16 are respectively made to grow on the lower face of the layer 17 and on the upper face of the layer 13, and at the same time, an SiO2 film 18 is formed extending over from the regions 19 to the outer periphery of the laminated material. |
