发明名称 METHOD FOR GROWING SINGLE CRYSTAL
摘要 PURPOSE:To stabilize the growth of a single crystal and to prevent generation of freeze out and dendrite in the prepn. of a single crystal of an inorg. compd. by the Chokralsky method by cooling a pulling shaft for the single crystal forcibly. CONSTITUTION:The pulling shaft is cooled forcibly at least at the initial and/or final stage of the growth of the single crystal. By this arrangement, the growth of the single crystal is proceeded stably and almost no freeze out nor dendrite is generated even if the temp. gradient in a pressure resistant vessel is gentle. Accordingly, the yield of the single crystal is improved and the crystallization effect becomes sufficient. In this method, the cooler 11 for cooling the pulling shaft 12 of the single crystal forcibly is provided, for example, at an exposed part at the top of the pressure resistant vessel 13.
申请公布号 JPS61127694(A) 申请公布日期 1986.06.14
申请号 JP19840249099 申请日期 1984.11.26
申请人 MITSUBISHI MONSANTO CHEM CO;MITSUBISHI CHEM IND LTD 发明人 ORITO FUMIO;YOSHINO TORU;IBUKA TOSHIHIKO
分类号 C30B15/00;C30B15/14;C30B29/40;H01L21/18;H01L21/208 主分类号 C30B15/00
代理机构 代理人
主权项
地址