| 摘要 |
PURPOSE:To obtain a microwave amplifier featuring the excellent frequency characteristics by making use of the fact that the power gain exists between the 1st and 2nd gates of the dual gate type FET. CONSTITUTION:Dual gate type FET1 is constituted by installing source 12, drain 13, 1st gate 14 and 2nd gate 15 each onto substrate 11. Gates 14 and 15 are connected to input terminal 19 and output terminal 20 via matching circuits 16 and 17 respectively. And the bias voltage is applied to gates 14 and 15 plus drain 13 through bias terminals 18, 21 and 22. At the same time, DC blocking capacitor 23 is connected to the drain. In such amplifier, the input signal is applied to terminal 19, and the output signal is extracted from terminal 20. |
