发明名称 |
Element for protection against overvoltages |
摘要 |
The invention relates to an element for protection against overvoltages. This element consists of the association of a triac (or thyristor) 10 and of a diac which is connected on the one side to the gate of the triac and on the other side to the triac's main electrode which is situated on the side away from the gate. Application to protection against overvoltages of a few tens of volts. <IMAGE>
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申请公布号 |
FR2574604(A1) |
申请公布日期 |
1986.06.13 |
申请号 |
FR19840018924 |
申请日期 |
1984.12.11 |
申请人 |
SILICIUM SEMICONDUCTEUR SSC |
发明人 |
JEAN-PIERRE NOGUIER ET JEAN-PAUL MONTAUT;MONTAUT JEAN-PAUL |
分类号 |
H02H9/04;(IPC1-7):H02H9/04;H01L29/68 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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