发明名称 Element for protection against overvoltages
摘要 The invention relates to an element for protection against overvoltages. This element consists of the association of a triac (or thyristor) 10 and of a diac which is connected on the one side to the gate of the triac and on the other side to the triac's main electrode which is situated on the side away from the gate. Application to protection against overvoltages of a few tens of volts. <IMAGE>
申请公布号 FR2574604(A1) 申请公布日期 1986.06.13
申请号 FR19840018924 申请日期 1984.12.11
申请人 SILICIUM SEMICONDUCTEUR SSC 发明人 JEAN-PIERRE NOGUIER ET JEAN-PAUL MONTAUT;MONTAUT JEAN-PAUL
分类号 H02H9/04;(IPC1-7):H02H9/04;H01L29/68 主分类号 H02H9/04
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