发明名称 |
HALBLEITERBAUELEMENT FUER HOHE SPANNUNG. |
摘要 |
Two gaps are placed in the reflowed phosphorus-doped silicon dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the reflowed silox. The invention is applicable to any device using a polarizable glassy coating which will be exposed to a high electric field extending along its surface and is shown applied to a high voltage diode, a high voltage MOSFET and a high voltage TRIMOS-type device which is a semiconductor switching device using spaced MOS transistors having a common drain region. |
申请公布号 |
CH656255(A5) |
申请公布日期 |
1986.06.13 |
申请号 |
CH19810007365 |
申请日期 |
1981.11.16 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HERMAN, THOMAS;LIDOW, ALEXANDER |
分类号 |
H01L21/316;H01L21/331;H01L23/31;H01L23/58;H01L29/06;H01L29/08;H01L29/40;H01L29/73;H01L29/739;H01L29/747;H01L29/78;H01L29/861;(IPC1-7):H01L29/06;H01L23/54 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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