| 摘要 |
PURPOSE:To scan freely an ion beam onto a target, and to adjust uniformly a thickness of a sputter film on a substrate by attaching an electrostatic lens and a deflector in an ion beam sputter device. CONSTITUTION:A high voltage of 35kV to an earth is applied by a power source to the tip of an ion source 7 in an ion beam sputter device. An argon gas is jetted from a tip nozzle of the ion source 7, and ionized by an electric field by the high voltage. The ionized Ar is emitted as an ion beam 13 by a leading-out electrode 12 of a high voltage, focused by an electrostatic lens 11 consisting of a control electrode 11a and a ground electrode 11b, also scans an ion beam 13 to the right and left, and in the upper and lower directions by a deflector 10, and brings the surface of a target 8 to a scan sputtering. As a result, the target 8 is scanned uniformly, and the uniformity of a film thickness distribution on a substrate can be adjusted freely.
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