发明名称 CHEMICAL VAPOR DEPOSITION METHOD
摘要 PURPOSE:To enable chemical vapor deposition without leaving a support mark by placing a substrate to be subjected to the vapor deposition on the support having the net of carbon fibers coated with thermally decomposable carbon or silicon carbide. CONSTITUTION:The net 2 of carbon fibers is fixed by holding between two frames 3 of artificial graphite, and the net 2 is coated with thermally decomposable carbon or silicon carbide to obtain a support 1. The substrate to be subjected to the vapor deposition is placed on the support 1, and the chemical vapor deposition is carried out. The substrate contacts linearly with the carbon fibers, and a reactive gas penetrates between the substrate and the support 1 because of the finely uneven surfaces of the carbon fibers, so the vapor deposition is carried out on the whole surface of the substrate without leaving the support mark.
申请公布号 JPS61124574(A) 申请公布日期 1986.06.12
申请号 JP19840244895 申请日期 1984.11.20
申请人 HITACHI CHEM CO LTD 发明人 AIBA YASUHIRO;HIRAI KEIZO
分类号 C23C16/26;C23C16/32;C23C16/458;(IPC1-7):C23C16/26 主分类号 C23C16/26
代理机构 代理人
主权项
地址
您可能感兴趣的专利