| 摘要 |
PURPOSE:To improve the accuracy of finishing of etching by forming a high melting-point metallic film body under the state, in which the film body occludes oxygen, onto a substrate, processing the film body to a required wiring pattern through dry etching and thermally treating it at 700 deg.C or higher. CONSTITUTION:A high-resistivity p<+> type silicon layer 2 is shaped onto a low- resistivity p<+> type silicon substrate 1, and a field oxide film is formed. The silicon layer 2 is exposed partially, and the surface of the substrate 1 is termally oxidized to shape a gate oxide film 3. A metallic molybdenum film 4 is formed onto the oxide film 3. A section not masked in the Mo film 4 is removed, and a Mo gate 4a is shaped. n<+> type layers 7 are formed while using the Mo gate 4a and a peripheral field film 6 as masks. An inter-layer insulating film 8 is shaped onto the whole surface. The whole is annealed and treated in a N2 atmosphere at 900 deg.C. Al electrodes 9 brought into ohmic-contact with sourcedrain sections and an Al wiring 10 connected to the Mo gate are formed through Al evaporation and etching. |
