发明名称 METHOD FOR FORMING CHEMICAL PLATING ON INSULATOR
摘要 PURPOSE:To form a chemical plating layer having high adhesive power on an insulator by roughening chemically the surface of the adhesive agent layer deposited on the surface of an insulator and grinding the surface to the surface of an insulator and grinding the surface to the extent of not occluding gas then executing chemical plating. CONSTITUTION:The adhesive agent layer 12 such as phenolic 'sumilite(R)' resin is deposited on the surface of the insulator 11 provided on a metallic plate 10. The surface of the layer 12 is then chemically roughened by using chromic acid mixture, etc. The chemically roughened surface is then ground by brushing to the surface condition to the extent of not occluding the gas such as hydrogen generated in the stage of chemical plating in the surface, more particularly the recessed part of the layer 12. The chemical plating layer 13 having the high adhesive strength to obviate blistering is formed on the insulator 11.
申请公布号 JPS61124577(A) 申请公布日期 1986.06.12
申请号 JP19840243196 申请日期 1984.11.20
申请人 OKI ELECTRIC IND CO LTD 发明人 KISANUKI KENICHI
分类号 C23C18/18;C23C18/22 主分类号 C23C18/18
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