发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To isolate the conductive region of high concentration in the isolation region and the inverse conductive region of high concentration to form electrodes, by applying ion injection to the forming of the channel stopper after coating the aperture with the concave silicon glass layer. CONSTITUTION:The silicon dioxide film 12 and the silicon nitride film 13 are formed as the pad on the surface of the silicon substrate 11, and the resist film 14 are spread on the film 13. The apertures 15 are formed in the isolation region for elements, and are coated with silica glass 16. The cross section of the coated silicon glass is concave because of the surface tension of liquid silica glass. The ion injection to form the channel stopper is applied from the top of the silicon glass layer on the aperture 15, and the ion injection region 17 is formed in the isolation regionfor elements. The silicon substrate 11 is oxidized by heat treatment at about 1,000 deg.C and the field oxide film 18 of silicon dioxide is formed, under which the conductive region 19 of high concentration is formed.
申请公布号 JPS61125146(A) 申请公布日期 1986.06.12
申请号 JP19840247170 申请日期 1984.11.22
申请人 FUJITSU LTD 发明人 TERANISHI YOSHIHARU;SUGAYA SHINJI
分类号 H01L21/76;(IPC1-7):H01L21/76 主分类号 H01L21/76
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