摘要 |
PURPOSE:To improve reliability and to enhance yield rate, by forming a matrix wiring part between photoelectric conversion elements and individual selecting circuits by a plurality of U-shaped conductors connecting the elements and wire shaped conductors, which connect the corresponding U-shaped conductors in the aligning direction of the elements. CONSTITUTION:On a glass substrate, a CdSe film is formed by evaporation. The film is activated by heat treatment. Patterning is performed by photoetching, and light conducting elements R11...Rmn are formed. Then, Ti and Au are sequentially evaporated on the entire surface of the substrate, and common electrodes C1...C2 and U shaped conductors l1...ln are formed. At the same time, a short-circuit conductor ls, which shorts the U shaped conductors l1 is formed. Au is plated on the matrix connecting part. Wire shaped conductors L1...Ln, which are formed on flexible lead tape, are bonded. Thus all the photoelectric conversion elements R11...Rmn are connected at the forming stage of the U shaped conductors. The breakdown of the elements due to static electricity can be prevented.
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