| 摘要 |
<p>PURPOSE:To obtain an element which has superior nonlinearity by using negative type photoresist and positive type photoresist and employing a self-matching method which exposes a substrate from its reverse surface through a 1st-layer thin film constituting a nonlinear element as a mask. CONSTITUTION:The 1st electrode metallic film 2 is formed on the glass substrate 1 and patterned as specified by photoetching, and an insulator 4 as the 2nd layer is formed over the entire surface except a terminal part by mask sputtering, mask vapor deposition, mask CVD, etc. The insulator 4 is formed of an insulating film 4 to a uniform film thickness of about 100Angstrom -1,000Angstrom and to such density that there is no pinhole. Then, an ITO film 5 serving as a picture-element electrode is formed by magnetron sputtering and the metallic film as the 1st layer is used as the mask to carry out photoetching by the self-matching method which uses negative type photoresist and exposes the substrate from its reverse surface, thereby obtaining a specific pattern. A photolithographic process is performed once more lastly to form a picture-element electrode shape.</p> |
