| 摘要 |
PURPOSE:To prevent erroneous operation due to a late effect, by forming a silicon single crystal island, in which a PNPN thyristor is formed and which has high impurity concentration with respect to another silicon single crystal island, and forming a junction constituting the PNPN thyristor deeper than the junction of the other element. CONSTITUTION:A first silicon single crystal island 11 is formed so that impurity concentration becomes 3X10<14>atom/cm<3>. A second silicon single crystal island 12 is formed so that impurity concentration becomes 4.5X10<14>atom/cm<3>. Thus a dielectric isolating silicon substrate is formed. A transistor having a junction 13 with a depth of 5mum is formed in the silicon single crystal island 11. An PNPN thyristor is formed by using a deep junction 14 having a depth of 30mum in the silicon single crystal island 12. With respect to the PNPN thyristor formed by the deep junction 14, the transistor constituting a late-effect-error preventing circuit is formed by the shallow junction 13. Therefore, a transition time to a conducting state is short, and the erroneous operation due to the late effect can be prevented. |
