发明名称 CHEMICAL VAPOR DEPOSITION METHOD
摘要 PURPOSE:To form a chemical vapor deposition layer on the supporting part of a base material as well without sticking of the base material to be subjected to chemical vapor deposition and the supporting member in the stage of subjecting the base material to the chemical vapor deposition treatment by coating the surface of a susceptor for said base material with thermally cracked carbon or silicon carbide. CONSTITUTION:The supporting member for the base material is formed by working artificial graphite to manufacture the susceptor 1 having three cylinders 2 each having <=10mm width at an equal interval on a disk 3 in the stage of subjecting the surface of the base material to chemical vapor deposition. The susceptor is put into a high-frequency induction heating furnace and the inside thereof is evacuated to a reduced pressure state then the susceptor is heated to about 1,800 deg.C. Gaseous aliphat. hydrocarbon such as methane or propane, gaseous arom. hydrocarbon such as benzene or toluene and org. chlorine compd. such as dichloroethylene or trichloroethane are introduced into the furnace to coat the susceptor with the carbon generated by thermal cracking. SiCl4, etc., as an Si source and CCl4, etc., as a C source are otherwise introduced into the furnace to form SiC to coat the susceptor with SiC. The base material is placed on such susceptor and is subjected to the chemical vapor deposition, by which the chemical vapor deposition layer is formed on the contact part with the supporting member as well and the sticking of the base material and the supporting member is prevented.
申请公布号 JPS61124572(A) 申请公布日期 1986.06.12
申请号 JP19840246854 申请日期 1984.11.21
申请人 HITACHI CHEM CO LTD 发明人 AIBA YASUHIRO;HIRAI KEIZO
分类号 C23C16/26;C23C16/32;C23C16/44;C23C16/458 主分类号 C23C16/26
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