| 摘要 |
PURPOSE:To reduce an intrusion to a gate oxide film of carrier pairs generated through impact ionization by forming a channel region to a curved surface shape along the gate oxide film. CONSTITUTION:A circular opening section is formed to an Si layer 12 shaped onto an insulating substrate 11. The surface of the Si layer 12 is oxidized to form a gate oxide film 14 on the side wall of the opening section, and a poly Si film 15 for a gate electrode is buried and shaped into the opening section. Impurity ions are implanted to form source-drain regions 16a, 16b. An inter-layer insulating film 18 is shaped onto the whole surface, contact holes 19 for electrodes are bored to the film 18, and Al wiring layers 20 are formed. Consequently, electrons from the source 16a flow while drawing arcs along the gate oxide film 14, but electrons separate from the film 14 and flow in bulk Si because they are accelerated in the vicinity of the drain 16b. Accordingly, electrons are difficult to intrude to the gate oxide film. |
