发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce cracks largely by forming a barrier metal layer on the outer circumference of a thick plating layer and a thin metallic layer reacting with solder on the outside of the barrier metal layer. CONSTITUTION:A barrier metal 6 is formed between solder 4 and thick plating 2. The barrier metal prevents a reaction between the thick plating 2 and solder 4, and is shaped so that a reaction layer between the thick plating 2 and solder 4 is not formed. A thin metallic layer 7 is shaped outside the barrier metal 6 in order to improve affinity with solder 4. Accordingly, cracks are reduced largely.
申请公布号 JPS61125156(A) 申请公布日期 1986.06.12
申请号 JP19840247112 申请日期 1984.11.22
申请人 NEC CORP 发明人 SAITO AKIRA
分类号 H01L23/34;H01L21/52;H01L21/58 主分类号 H01L23/34
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