| 摘要 |
PURPOSE:To dissipate heat from upper surface by connecting one electrode wiring metal of a resistor coated with an insulating film with wiring metal having high area space factor, and coating the wiring metal through an insulating film widely on the resistor. CONSTITUTION:A resistor 1 is obtained by a polycrystalline silicon of layer resistor 200OMEGA/square, and thermally oxidized at the bottom at a silicon substrate 6, coated with a silicon dioxide film 5 of 1.6mum thick, and coated at the upper and side surfaces with vapor phase grown silicon dioxide film 2 of 0.3mum thick. Electrode wirings 3 are connected with one end of the resistor 1, extended to one side to form an electric circuit, the resistor 1 is simultaneously coated widely, electrode wirings are connected with power source wirings or ground wiring having large area space factor in a semiconductor integrated circuit device. Since both upper and lower surfaces are heat sink structure, local high temperature rise in one device can be replaced by the entire low temperature rise in the device. Thus, long lifetime of the wiring life inversely proportional to the temperature in the device can be performed. |
