| 摘要 |
PURPOSE:To obtain a method of growing a thin compound semiconductor crystal film of high quality in the order of a single molecule layer by feeding gas containing a component grown on a substrate, and emitting a light containing specific wavelength component of two or more types or periodically emitting only specific time zone. CONSTITUTION:TMG (trimethyl gallium) 8 is fed under the pressure of 1X10<-3>Pa for 4sec, exhausted for 3sec, AsH3 (arsine) 9 is fed under the pressure of 7X10<-3>Pa for 20sec, and exhausted for 3sec to grown a GaAs single molecule layer on a substrate 12. This operation is repeated to grown the GaAs single crystal grown film of the desired thickness in the accuracy of the single molecule layer. As a result of a test, the surface of the thin GaAs film becomes very flat as compared with the time of not emitting the light. In addition, the inner distribution of the grown film layer is remarkably improved. This means that the boundary of hetero epitaxially growing necessary for a device having a superlattice structure is flat in the order of a molecule layer over a wide range, and the manufacture of a light function element formed in a hetero structure to any ten layers made of the GaAs and A As can be performed together with a light emitting type. |
