| 摘要 |
<p>A semiconductor LSI device formed in a semiconductor substrate (10) comprising source/drain regions (11, 12) of a MOSFET, polycrystalline silicon conductor (33) to be connected to the source/drain regions, and a silicide layer (24) interposed between the source/drain region and the polycrystalline silicon conductor.</p><p>The silicide penetrates the inevitable thin oxide film on the silicon substrate surface, assuring contacts of low resistance, while lateral resistance of the source/drain region formed in the semiconductor substrate (10) is also reduced; this effect can also be used to reduce the contact resistance between two polycrystalline silicon layers (30, 33). Reduction of contact/connection resistance is accomplished in a high density LSI which is thus provided with an improved high-speed performance.</p> |
