Electron-beam-pumped semiconductor laser and array.

摘要

An electron-beam-pumped semiconductor laser generates a substantially transverse laser amplification (105) in response to a longitudinal electron beam input (104). As a result of a grooved active region configuration, the transverse laser amplification (105) results in a longitudinal laser output (106) in the same direction as that of the original electron beam input (104). This composite transverse-longitudinal configuration results in reduced threshold power density, thus enhancing laser lifetime, while at the same time provides a configuration which is particularly advantageous for use in large-area laser array display screens.