| 摘要 |
PURPOSE:To suppress the generation of a projection on the surface of a wiring layer by contacting the first metal layer with the upper surface of an aluminum wiring layer, contacting the second metal layer with the side, and forming one wiring layer of the aluminum wiring layer and the first, second metal layers. CONSTITUTION:A field oxide film 202 is grown on a silicon substrate 201, an aluminum 203, and an alloy 204 of titanium and tungsten as the first metal layer are formed on the entire surface, photoresist 205 is coated, the a wiring layer region is patterned. The layers 203, 204 are selectively removed except the region masked by the photoresist 205, the photoresist 205 is the removed, titanium 206 is formed as the second metal layer on the entire surface, and the entire surface is reactively ion etched. A wiring layer in which the layer 203 is coated by the layers 204, 206 is formed, and no aluminum expose portion is presented. Accordingly, a hillock of aluminum is suppressed also in the thermal history at the interlayer insulating film forming time, thereby holding the flatness of the surface of the wiring layer. |
