发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To inhibit an effect on a semiconductor substrate even when noises are applied to a conductive layer, and to prevent the generation of a malfunction by forming an insulating layer between the semiconductor substrate and the conductive layer, to which fixed potential is applied, and capacitive-coupling the substrate and the conductive layer. CONSTITUTION:A conductive layer 9 is formed onto the surface of an insulating layer 8 shaped to another main surface of a semiconductor substrate 2, a capacitance element is constituted by a semiconductor substrate 5 and the insulating layer 8, and a semiconductor chip is operated under the state in which supply potential or the fixed potential of ground potential is applied to the semiconductor substrate 5 through the conductive layer 9 and the capacitance element consisting of the insulating layer 8 and the semiconductor substrate 5 from a conductive layer 4 in a semiconductor package. Accordingly, even when noises are generated on a power supply line or a grounding line and noises are applied to the conductive layer 4 in the semiconductor package, the conductive layer 9 and the capacitance element constituted by the insulating layer 8 and the semiconductor substrate 5 inhibit the noises, thus approximately eliminating the effect of noises in the semiconductor substrate 5, then preventing the malfunction of the semiconductor chip.
申请公布号 JPS61123157(A) 申请公布日期 1986.06.11
申请号 JP19840246807 申请日期 1984.11.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIKI YUMIKO;SAKASHITA KAZUHIRO;TAKIMOTO ISAO;KISHIDA SATORU
分类号 H01L23/12;H01L23/64;H01L25/00 主分类号 H01L23/12
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