Field-effect transistor with self-aligned gate and method for its manufacture.

摘要

A semiconductor device comprising a compound semiconductor substrate (10) whose surface is provided with a source region (6), a drain region (7) and an interventing channel region (5); a source electrode (8) formed on said source region (6); a drain electrode (9) mounted on said drain region (7); and a 3-ply gate electrode (1) formed on said channel region (5) and consisting of a high melting metal layer (4), a barrier metal layer (3) and a gold layer (2) in that order.