发明名称 Verfahren zum Herstellen von Halbleitern
摘要 1,057,687. Bending a semi-conductor to a substrate. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. Aug. 31, 1965 [Dec. 11, 1964], No. 50545/64. Heading H1K. A semi-conductor body is bonded to a substrate via an intermediate metallic layer using a laser, wherein the laser beam passes through the body on to the layer thereby welding the body to the substrate, the laser beam being of such a wavelength that absorption in the body is appreciably lower than in the layer. In a specific embodiment a phosphorus doped Si planar transistor is bonded to a gold-plated " Kovar " (Registered Trade Mark) header via a gold layer. The header has a glass-filled base and Fernico connecting wires for the electrodes. A Xenon laser may be used to heat the layer to at least 370‹ C. and thus form a Au/Si eutectic. In alternative embodiments the intermediate layer may be Au/Si or Au/Sn alloy whilst the support may be of Ni or nickel plated. After welding, the body may be encapsulated. A diode may also be mounted in a similar manner.
申请公布号 DE1514288(A1) 申请公布日期 1969.06.12
申请号 DE19651514288 申请日期 1965.12.07
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 STUART DONALDSON,KENNETH JAMES;ANN MCGHIE,ELIZABETH
分类号 H01L21/00;H01L21/60 主分类号 H01L21/00
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