| 摘要 |
PURPOSE:To inject and discharge charges to and form a floating gate efficiently, and to improve the degree of integration by forming a first conduction type region onto a second conduction type region having comparatively thin concentration including two isolated second conduction type regions shaped onto a first conduction type semiconductor layer on an insulating substrate, while adjoining the floating gate. CONSTITUTION:n<+> Type source-drain regions 110, 111 mutually isolarted on a p type Si layer 102 on a sapphire substrate 101, an n typ diffusion region 108 having comparatively thin concentration connected to the region 111, a floating gate 105 formed between the regions 110 and 111 through an oxide film 104, and a control gate 115 shaped through an oxide film 106 are formed, a p<+> type diffusion region 113 is shaped into the region 110 in the surface of the Si layer 102, and a p<+> type diffusion region 114 is formed to the surface of the region 108 adjacent to the gate 105. When negative potential is applied to a drain electrode 119 to the gate 115 and positive voltage slightly higher than the electrode 119 to a source electrode 118, one part of holes flowing into the region 108 from the layer 102 flows into the floating gate 105, and electrons stored in the gate 105 are neutralized, thus continuously storing holes. |
