| 摘要 |
PURPOSE:To enable to form a contact between wirings with high reliability by forming a contacting hole with a resist film in an insulating film, and burying the hole with a metal layer by unidirectional particle flow of a metal material. CONSTITUTION:A contacting hole 13 is opened in an insulating film 12 formed on a semiconductor substrate 11. Then, a metal material aligned in the directivity in one direction such as aluminum particle flow is accumulated until the contacting hole is buried to form an aluminum layer 15. The particle flow of such unidirectivity is formed by sputtering using many meshes formed with fine holes, and slender holes of the meshes of the particles are linearly moved and accumulated in the hole. The portion of the hole is coated by a resist film, the layer 15 on the film 14 is removed, aluminum is eventually accumulated to form an aluminum layer 16. Thus, since the buried surface is formed to be flat, the formation of the contact with the substrate and the contact between wirings of the layers in multilayer wirings are formed with high reliability. |
