| 摘要 |
PURPOSE:To enable to form an amorphous silicon by inserting a substrate into a vacuum vessel, then heating, sufficiently degassing, then feeding the prescribed quantity of stock gas, separating the vessel, a gas feeding system and an exhausting system, and generating a glow discharge. CONSTITUTION:A substrate 3 is mounted on electrodes 4, heated by a heater 2 while evacuating in vacuum, and degassed. Then, a vessel 1 and an exhausting system are separated by a connecting portion 11. Then, valves 23, 24 are opened, SiH4 is, for example, fed from a bomb 7 in the suitable quantity into the vessel 1, the SiH4 is exhausted from a purging pipe 9, leaked, and a gas piping system is separated from a connecting part 8. When the gas feeding system and the exhausting system are disconnected, only the heater 2 and a discharge power source 6 are connected to the vessel 1. Thus, since the vacuum vessel 1 can be readily moved, it does not occupy a place as an a-Si forming unit. After discharged for the prescribed time, PH3 or a mixture gas of PH3 and SiH4 or B2H6 or a mixture gas of B2H6 and SiH4 is fed into the vessel 1 to continue a discharge. Then, since an i-type a-Si film is formed in the previous step, the film of i-type/n-type or i-type/p-type is formed. |
