发明名称 PLASMA REACTION APPARATUS
摘要 PURPOSE:To prevent abnormal reaction of substrate at the recessed portions by covering the surface of recessed portions provided to a substrate holder with an insulator. CONSTITUTION:The recessed portions 8A, 8B, 8C, 8D for automatic processing are provided to a substrate holder 3 made of aluminum. each recessed portion is filled with insulator 9A, 9B, 9C, 9D made of alumina and quartz, etc. After forming the recessed portions, a film is deposited on the substrate 2 by plasma reaction or a film is etched, thereby eliminating increase of thickness of film deposited on the recessed portions and an excessive etching of the deposited film.
申请公布号 JPS61123128(A) 申请公布日期 1986.06.11
申请号 JP19840234705 申请日期 1984.11.07
申请人 FUJITSU LTD 发明人 KOYAMA KENJI;TAKASAKI KANETAKE;TSUKUNE ATSUHIRO;NISHIMURA MASAHIDE
分类号 H01L21/302;C23C14/50;C23F4/00;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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