| 摘要 |
PURPOSE:To control the shape of a hole and free depth by obtaining the optimum temperature of a silicon single crystal to be etched, and executing a photoexciting etching at the optimum temperature. CONSTITUTION:The temperature of a plurality of silicon single crystals to be etched is varied for two different crystal orientations of the single crystals having different specific resistances such as 100 plane and 111 plane to execute a plurality of photoexciting etchings to obtain the relationship. Then, in the manufacturing steps of a semiconductor device, when chlorine gas is used to etch the single crystals by a photoexciting etching method, the optimum temperature to hole the crystals of articles to be etched during etching period is obtained on the basis of the relation indicated by a graph attained for the slope of the surface formed as a result of etching the shape of the hole. The crystals of the articles to be etched are held at he optimum temperature, and chlorine gas is used to execute a photoexciting etching method. Thus, the hole of the desired shape selected freely can be formed. |
