发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To suppress influence of noise on a semiconductor substrate by providing an insulating thin plate between a conductive layer of package and other main surface of semiconductor substrate and forming a capacitance element with such conductive layer and semiconductor substrate. CONSTITUTION:A lower insulator 8, a conductor 9 and an upper insulator 10 are sequentially fixed on a conductive layer 4 of package and other main surface of semiconductor substrate 5 is fixed on an insulator 10 through a bonding agent 12. An insulating thin film 11 is formed by these insulator 8, conductor 9 and insulator 10 and this thin plate 11 forms a capacitance element with the substrate 5 and layer 4. Therefore, in such a semiconductor integrated circuit device, a capacitance element formed by the substrate 5, thin plate 11 and layer 4 inserted between the power supply and ground suppresses noise even when the noise generated by operation of semiconductor chip is applied to the ground line or power supply line, and therefore influence of noise at the substrate 5 can be eliminated.
申请公布号 JPS61123147(A) 申请公布日期 1986.06.11
申请号 JP19840246808 申请日期 1984.11.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKIMOTO ISAO;SAKASHITA KAZUHIRO;MIKI YUMIKO;KISHIDA SATORU
分类号 H01L21/52;H01L21/58;(IPC1-7):H01L21/58 主分类号 H01L21/52
代理机构 代理人
主权项
地址