| 摘要 |
PURPOSE:To form a vertical and smooth laser resonator surface easily by shap ing an end surface through chemical etching first, irradiating the end surface by focused ion beams and finishing the end surface when the end surface of a Fabry-Perot type resonator is shaped. CONSTITUTION:A striped section 2 is formed to a wafer 1, into which a semiconductor laser, etc. consisting of an AlGaAs/GaAs group, etc. are manufactured, by using a photo-resist mask film 4 through a photo-lithography and chemical etching. Since sags are generated in the end surfaces 3 of the shaped striped section 2, the vertical and smooth end surfaces 3 are formed through the projection of Ga ion beams 5 as focused ion beams. Both end surfaces 3 are processed completely by ion beams 5, and damages due to processing are removed perfectly through heat treatment for approximately ten min at 500 deg.C. Accordingly, an excellent semiconductor laser, approximately 20mA oscillation threshold currents therefor may be used, is otained with superior reproducibility without depending upon a cleavage method.
|
