| 摘要 |
PURPOSE:To eliminate the irregularities of the thickness of a resist layer, and to improve the degree of integration of a gate electrode by formig the resist layer having the same etching rate as a gate electrode material onto a gate electrode material layer directly or just after patterning and flattening the whole surface. CONSTITUTION:A field oxide film 22 is formed onto a P type Si substrate 21, a gate oxide film 24 is shaped into an element region 23, a polycrystalline silicon layer 25 and a resist layer 26 having the same etching rate as the layer 25 are formed onto the whole surface, and the whole surface is flattened. The layers 26, 25 are etched through reactive ion etching until the surface of the field oxide film 22 is exposed. A resist pattern 27 is shaped onto the layer 25, the layer 25 is removed selectively through etching while using the resist pattern 27 as a mask to form a gate electrode 28, the film 24 is removed while employing the gate electrode 28 as a mask, and an N type impurity is introduced to the substrate 21 while using the electrode 28 as a mask to form N<+> type source-drain regions 29, 30.
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