| 摘要 |
PURPOSE:To suppress formation of metal oxide in the molecular beam source by providing auxiliary Knudsen cell to the position opposing to the Knudsen cell and irradiating the molecular beam source for growth with the auxiliary molecular beam. CONSTITUTION:The Knudsen cell 2-6, shutters 7-11, semiconductor substrate 12 for growth and a shutter 13 are provided within a growth chamber 1. In case the auxiliary Knudsen cell 14 and shutter 15 are adjacent to the substrate 12 and the shutter 7 of the Ga Knudsen cell is opening, these are provided to the position considering the Ga molecular beam source. During the growth of compound semiconductor, the Ga molecular beam source is always irradiated with the molecular beam of Al for example from the cell 14. Thereby, it is prevented that an oxide is included into the growth layer by suppressing forma tion of oxide on the surface of molecular beam source. |
