发明名称 ION BEAM MASK REPARING DEVICE
摘要 <p>PURPOSE:To enable exact correction of defects without staining the other parts by installing the coaxial course of an org. compd. vapor to the optical axis of ion beams, and simultaneously executing blowing of the vapor and irradiation of the ion beams only at the prescribed region of the white defect of a mask. CONSTITUTION:In repairing the white defect caused by misscutting off the necessary part of the mask for use in the manufacturing process of semiconductor integrated circuits, the device to be used is shown on the right figure. The vapor 6 of an org. compd., such as phenanthrene, pyrene, or fluoranthene is blown coaxially to the optial axis of the ion beams 3 emited from the ion source 1 of an optical system 2, at the prescribed region of the mask 4 having the defect. The vapor 6 is produced by heating the vessel 7 of the org. compd., passed through a valve 8, further, heated to a prescribed temp. with a heater 9 adjusted in temp. with a temp. controler 10, and blown through the vapor course 5 at the defective region, thus permitting the defect to be repaired exactly without staining the other parts and the device and in a short time.</p>
申请公布号 JPS61123841(A) 申请公布日期 1986.06.11
申请号 JP19840245603 申请日期 1984.11.20
申请人 SEIKO INSTR & ELECTRONICS LTD 发明人 YAMAMOTO MASAHIRO;SATO MITSUYOSHI;MINAFUJI TAKASHI;NAKAGAWA YOSHITOMO;YASAKA KOJIN
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/00
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