| 摘要 |
1,024,289. Integrated semi-conductor circuits. STANDARD TELEPHONES & CABLES Ltd. Nov. 17, 1964, No. 46748/64. Heading H1K. In a monolithic semi-conductor integrated circuit, wherein devices are formed in a first region having an insulating region thereon and overlying a second region of different conductivity type, channels are etched about each device so as to form at least part of an insulating means around the device, but the etching is such that the insulating region is left intact and receives a metallized connection pattern thereon. In a modification a channel is etched around the device but a narrow neck is left the material of which is converted to the conductivity of the second region (Fig. 6, not shown). In a specific embodiment, Fig. 3, a P-type silicon substrate 2 has an N-type epitaxial layer 1 deposited thereon, an N+region 9 being provided in substrate 2 to reduce internal resistance. A transistor device is incorporated in layer 1 comprising a P-type base 5, an N-type emitter 6 and an N + collector contact 7. Moats 10 are etched in layer 1 and substrate 2, isolating the device and thus lowering the capacitance. The isolating moats are made by etching silicon away from under the insulating region leaving " bridges " of insulating material to receive the metallized pattern. |
