| 摘要 |
A semiconductor device having a multilayer wiring structure with improved interlayer connections comprises a semiconductor substrate with a first insulating layer provided on a major surface of the substrate; a first extended wiring layer of, for example, polycrystalline silicon, formed on the first insulating layer and preferably having an essentially rectangular cross-sectional shape; a second insulating layer provided on the first insulating layer and on the first wiring layer; a contact hole provided in the second insulating layer to expose a contact region of the first wiring layer and having a width greater than the width of the contact region; a third insulating layer formed in the contact hole in contact with the sidewalls of the contact region and having a thickness which decreases in height smoothly and gradually in a direction away from the respective contact region sidewalls; a second extended wiring layer of, for example, aluminum formed on the second insulating layer, in contact with the third insulating layer in the contact hole and connected electrically to the upper surface of the contact region of the first wiring layer.
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