| 摘要 |
PURPOSE:To produce a silicon single crystal having large diameter and uniform and low oxygen concentration, easily, by using a crucible having a non-oxide layer as at least a part of the inner wall, melting the silicon crystal raw material in the crucible, and pulling up the single crystal from the molten silicon. CONSTITUTION:A silicon single crystal is produced by pulling up a single crystal from crystal raw material melted in a crucible 10 made of quartz, etc. In the above process, a non-oxide film 11 such as Si3N4, SiC, etc., is applied to at least a part of the inner wall of the SiO2 contacting with molten silicon. The dissolution of oxygen from the inner wall of the crucible can be decreased by the use of the crucible 10, and a silicon single crystal having large diameter and uniform and moderately low oxygen concentration can be produced. |
