发明名称 Charge coupled device with structures for forward scuppering to reduce noise
摘要 A charge coupled device incorporates a P+ region which may be forward biased with respect to the channel to provide PNP transistor action with the channel acting as the base region at first times and at other times the P+ region is reverse biased, permitting charge to flow in the channel undisturbed. The invention overcomes the problem of conducting charge underneath or past an electrode or region used at times for emptying charge from the channel. Also an N+ region separated by an electrode may inject or remove carriers at selected times from the channel of a CCD to provide forward scuppering of the carriers to remove KTC noise.
申请公布号 US4594604(A) 申请公布日期 1986.06.10
申请号 US19830544168 申请日期 1983.10.21
申请人 WESTINGHOUSE ELECTRIC CORP. 发明人 KUB, FRANCIS J.
分类号 H01L29/10;H01L29/768;(IPC1-7):H01L29/78;G11C19/28;H01L27/14;H01L31/00 主分类号 H01L29/10
代理机构 代理人
主权项
地址
您可能感兴趣的专利