| 摘要 |
Photoresist materials that are sensitive in suitable range including the 200 nm to 300 nm ultraviolet radiation range are provided which permit relatively higher resolution and thus a higher information density in microcircuits. The positive photoresist materials are copolymers of (a) monomers selected from those of 1,4-disubstituted-2-butene-1,4-diones of the general structures of <IMAGE> wherein R1, R2 are the same or different and are substituent selected from the group of 1 to 6 carbon atom alkyl and halogen substitutes alkyl radicals methoxy and ethoxy radicals, aryl, halogen substituted aryl, alkyl substituted aryl, alkoxy substituted aryl, nitro substituted aryl, cyano substituted aryl and amino substituted aryl radicals, and benzyl, naphthyl and anthryl radicals with (b) at least one vinylidene monomer of the general formula <IMAGE> where R3 represents hydrogen, halogen or an alkyl group, and R4 is a functional group such as aryl, substituted aryl, carboxylic acid, lower alkyl carboxylate, lower alkyl, lower alkenyl, hydrogen, halogen, nitrile, lower acyloxy, lower alkoxy amido, or substituted amido, provided however where either R3 or R4 is hydrogen, the other is not a phenyl radical. Typical comonomers are methyl methacrylate, acrylonitrile, acrylamide, alpha -methyl styrene, ethyl acetate, ethyl methacrylate, n-propylmethacrylate and N-benzyl methacrylamide.
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