发明名称 |
GATE-COUPLED FIELD-EFFECT TRANSISTOR PAIR AMPLIFIER |
摘要 |
<p>Gate-Coupled Field-Effect Transistor Pair Amplifier An enhancement mode and a depletion mode pair of N-channel MOS transistors have their drain-source conduction paths connected in series and provided with a bias current means. The gates are coupled together as an input node. In one embodiment their bulk regions are source-connected and the output is from the source of the enhancement mode device to obtain a source follower configuration amplifier. In a second embodiment, the output is taken from the drain of the depletion mode device to obtain a common source configuration amplifier. Two source follower pairs are disclosed connected in parallel to form a differential input voltage amplifier stage. A common source pair is disclosed in combination with an additional enhancement mode transistor to form a current mirror.</p> |
申请公布号 |
CA1205879(A) |
申请公布日期 |
1986.06.10 |
申请号 |
CA19830442315 |
申请日期 |
1983.11.30 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
SWANSON, ERIC J. |
分类号 |
H03F1/22;H03F3/34;H03F3/345;H03F3/45;H03F3/50;(IPC1-7):H03F3/42;H03F3/16 |
主分类号 |
H03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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