PRODUCTION OF MAGNETORESISTANCE EFFECT TYPE THIN FILM MAGNETIC HEAD

摘要

PURPOSE:To make possible the incorporation of dry etching for pattering of a conductor layer by using the layer of which the sputter etching rate is lower than the sputter etching rate of the upper layer of the conductor layer and in which an etchant to permit etching without attacking the upper layer and MR element film exists as the lower layer of the conductor layer. CONSTITUTION:The required part is coated with photoresist 12 and thereafter a Ti film 11 of the part where the resist is not coated and a Cu film 10 in the lower part thereof are removed by about 4 kAngstrom by sputter etching using gaseous Ar. The remaining Cu film 10 in the part where the resist is not coated is thereafter removed by the sputter etching using the gaseous Ar contg. O2. The etching rate of the film 9 is considerably lower than the etching rate of the Cu film 10 and therefore the film 10 can be removed while the film 9 is substantially held intact. The MR element film 7 existing under the Cr film 9 is therefore thoroughly protected. The Cr film 9 in the unnecessary pat is removed with the laminated film of the Cu film 10 and the Ti film 11 as a mask by using an aq. soln. mixture composed of K3Fe(CN)6 and KOH after the photoresist 12 is removed.