| 摘要 |
<p>1,166,691. Magnetic storage apparatus. STANDARD TELEPHONES & CABLES Ltd. 7 April, 1967, No. 15991/67. Heading H3B. A non-destructive read-out two core per bit memory comprises a " waffle-iron " type baseplate superposed by a planar thin film of isotropic magnetic material. The base-plate of ferrite material is provided with slots 10, 11, digit wires 13, 14 and word lines 17, 18. The digit wires are arranged in pairs interleaved with each other, Fig. 1 (not shown), so that adjacent wires of each pair are spaced from each other by a wire of another pair in order to suppress noise during a read operation. Each bit comprises two storage areas 22, 23 in the overlying thin film, the magnetic circuit of each storage location being completed by the adjacent posts 12 of the base plate. In a read/ write cycle a positive clear pulse is applied over wire 17 in a direction such that both areas 22, 23 are set to the condition -#. This pulse in wire 17 is followed by a negative half-write pulse in this wire coincidently with another negative half-write pulse on digit wire 14 via switch 20, this resulting in the magnetization of area 23 being switched to the condition # whilst that of area 22 remains in its original condition representing a stored " 0 ". Information is then read out non-destructively by applying a negative half-write pulse to word line 17 which tries to switch area 22 to the # condition inducing an output in wire 13, the magnetic condition of area 23 being unaffected by the read pulse. The polarity of the output signal difference of wires 13, 14 is sensed by amplifier 21. At the end of the read pulse the condition of area 22 reverts to its original state -#. If a "1" is written into the storage location a clear pulse is again applied to word line 17 followed by coincident half-write pulses on lines 17 and 13 switching area 22 to the # condition. Read out is non-destructively performed by again applying a half-write pulse to the word line.</p> |
