发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To increase and strengthen a driving ability to realize a high speed of a reading speed by operating a sense amplifier in a non-selected block after bit lines of respective blocks are connected in series to one another by turning a switch on. CONSTITUTION:Immediately after all switches for connecting bit lines are turned on, making a clock phi' H, and turning a transistor Q15 on, sense amplifiers of all blocks are activated. In this manner, after the switch is turned on, a sense amplifier of a non-selected block is also operated to increase a driving ability. Accordingly, even when a bit line BL becomes individual, a difference in an electric potential between bit lines is rapidly restored to make fast a time to change a next address and attain a high speed.</p>
申请公布号 JPS61122993(A) 申请公布日期 1986.06.10
申请号 JP19840243966 申请日期 1984.11.19
申请人 FUJITSU LTD 发明人 AOYAMA KEIZO
分类号 G11C11/41;G11C11/34 主分类号 G11C11/41
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