| 摘要 |
PURPOSE:To enable to form the shallow diffusion layers of the source and the drain by a method wherein, after the gate electrode is formed, N-type or P-type impurities are ion-implanted in the source part and the drain part and after contact holes are formed, impurities of the same polarity are ion-implanted and an annealing is performed for a short time using a lamp. CONSTITUTION:A gate electrode 1 is formed, and after that, N-type impurities 6 are ion-implanted in the source part and the drain part using the gate elec trode 1 as a mask to form the unactive layers 7 of the source and the drain. Then, interlayer insulating films 8 are deposited and after contact holes 9 are formed, N-type impurities 14 are ion-implanted using the interlayer insulating films 8 as masks to form leak stopper unactive layers 10. Lastly, an annealing is performed by lamp irradiation 10 to activate, thereby forming the diffusion layers 12 of the source and the drain and leak stopper diffusion layers 13. As an annealing can be performed using a lamp in such a way, the shallow diffu sion layers of the source and the drain can be formed and the characteristics of the semiconductor element are made to improve. Moreover, this way is very effective for forming microscopically the element as well. |
