发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To eliminate an astigmatic difference while reducing noises by providing a means, through which an effective refractive index to laser beams is changed in the direction of a resonator, and using an optical waveguide mechanism in the vicinity of at least one end surface of a laser device as an index waveguide. CONSTITUTION:An N-type GaAlAs clad layer 5, an un-doped GaAlAs active layer 6, a P-type GaAlAs clad layer 7 and an N-type GaAs layer 8 are grown continuously on an N-type GaAs substrate 4. The N-type GaAs layer 8 is etched through a photo-resist process to form a channel groove, and the groove is buried with a P-type GaAlAs layer 9, a P-type GaAlAs layer 10 and a P-type GaAs layer 11. The thickness of the clad layer 7 in one end surface region 2 in a striped region is thinned at that time, and an index wavegui-de is shaped by the effect of the P-type GaAlAs layer 9 having a high refractive index. The clad layer 7 is thickened and a gain waveguide or a self-excited oscillation is formed in a region 3 in which a laser oscillation occupies the greater part of the striped region, and laser beams radiated from an end surface on the side of the region 2 are mode-converted in the region 2 and an astigmatic difference is reduced.
申请公布号 JPS61121381(A) 申请公布日期 1986.06.09
申请号 JP19840242297 申请日期 1984.11.19
申请人 HITACHI LTD 发明人 KAJIMURA TAKASHI;KAYANE NAOKI;ONO YUICHI;NAKATSUKA SHINICHI;UOMI KAZUHISA;KONO TOSHIHIRO;OTOSHI SO
分类号 H01S5/00 主分类号 H01S5/00
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