| 摘要 |
PURPOSE:To eliminate heat deterioration while preventing the generation of the damage of a mask film by forming the mask film on the surface of multiplayer semiconductor layer on a substrate, melting back and removing a surface exposed by shaping a mesa section through chemical etching and growing a buried layer to the removing section. CONSTITUTION:Each semiconductor layer of a buffer layer 2, an optical absorption layer 3, an antimelt-back layer 4, a carrier multiplying layer 5 and a light- receiving region forming layer 6 is grown on a substrate 1 in succession, and a mask film 7 is shaped. The liht-receiving region forming layer 6 is etched through chemical etching to form a mesa section, a surface exposed through etching is melted-back, and buried layer 8 are grown. Accordingly, no mask film is damaged, and the exposed surface is melted-back slightly, thus removing a heat deterioration section generated in the surface exposed through chemical etching, then resulting in no breaking section and a constant form in a growing buried layer. |
