| 摘要 |
PURPOSE:To reduce the resistance value of a gate electrode, and to improve reliability and practicality by removing an irregular compensating film and one part of an inter-layer insulating film through etching until the top surface of the gate electrode is exposed and forming a low-resistance metallic film brought into contact with the gate electrode. CONSTITUTION:An silicon dioxide film shaped for heat treatment is removed, and an silicon dioxide film 9 as an inter-layer insulating film is formed. A resist film 10 and one part of the silicon dioxide film 9 are etched until the top surface of a gate electrode 3 is exposed. A titanium film 11 is shaped, and a gold film 12 is formed, and the gold film 12 is and the titanium film 11 are patterned while using a photo-resist film 13 as a mask. The silicon dioxide film 9 is patterned, windows 9A and 9B for ohmic-contact electrodes are formed, a film consisting of gold-hermanium/gold is shaped under the state in which the photo-resist film employed as a mask when the silicon dioxide film 9 is patterned is left as it is, and the film is patterned to form a source electrode 14 and a drain electrode 15. |
