| 摘要 |
PURPOSE:To realize a semiconductor light-receiving element capable of responding to an optical pulse by a method wherein an interface generating a two dimensional hole gas is formed in a P-type semiconductor layer of a P-N junction and another interface generating a two-dimensional electron gas is formed in an N-type semiconductor layer of the P-N junction. CONSTITUTION:When light with its wavelength longer than the light-absorbing end of an N-type Al0.48In0.52As layer 7 goes into the N-type Al0.48In0.52As layer 7, electrons 11 and holes 12 are generated, respectively, in a P-type Ga0.47In0.53As layer 4 and N-type Ga0.47In0.53As layer 5j. The electrons 11 are developed into a two-dimensional electron gas in the interface between the layer 5 and an N-type Al0.48Ga0.52As layer 6 due to a P-N junction-caused electric f-ield and to the band curvature involving the layers 7 and 5. The electron gas responds promptly to a voltage applied to an electrode 8. The holes 12 are developed into a two-dimensional hole gas in the interface between a P-type Al0.48In0.52As 2 and the layer 4 due to the P-N junction-caused electric field and to the band curvature involving a P-type Al0.48In0.52As layer 2 and the layer 4. The hole gas also responds promptly to a voltage applied to the electrode 8. |
